About Hot-Pressed Aluminum Nitride (AlN)
Hot pressed aluminum nitride ceramics are sintered by vacuum hot pressing. The aluminum nitride purity is up to 99.5%(without any sintering additives), and density after hot pressing reaches 3.3g/cm3, it also has excellent thermal conductivity and high electrical insulation. The thermal conductivity can be from 90 W/(m·k) to 210 W/(m·k).
The aluminum nitride ceramic mechanical strength and hardness of the product after high temperature and high pressure are better than those of the tape casting process, dry pressing and cold isostatic press method.
Hot pressed aluminum nitride ceramics have high temperature resistance and corrosion resistance, and will not be eroded by various molten metals and molten hydrochloric acid.
Typical Application of Aluminum Nitride (AlN)
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- Cooling cover and magnetic resonance imaging equipment
- As the substrate of high-frequency surface acoustic wave device, large-size and high-power heat dissipation insulating substrate
- Electrostatic chuck and heating disk for semiconductor and integrated circuit
- Infrared and microwave window materials
- Crucible for compound semiconductor single crystal growth
- Target of high-purity aluminum nitride film
Aluminum Nitride (AlN) Features
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- High thermal conductivity
- Expansion coefficient can match with semiconductor silicon chips
- High insulation resistance and voltage withstand strength
- Low dielectric constant and low dielectric loss
- High mechanical strength
Maximum Size of Hot Press Sintering
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- Length 500 x width 500 x height < 350 mm、
- Outer diameter 500 x height < 500 mm
- We can provide Hot Pressed Aluminum Nitride (HPAN) as required.
Inquiries and orders should include the following information:
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- Dimensions or drawings
- Quantity
Typical Specification
Purity: >99%
Density: >3.3 g/cm3
Compress Strength: >3,350MPa
Bending Strength: 380MPa
Thermal Conductivity: >90W/(m·K)
Coefficient of Thermal Expansion: 5.0 x 10-6/K
Max. Temp: 1,800°C
Volume Resistivity: 7×1012 Ω·cm
Dielectric Strength: 15 kV/m